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SI6954ADQ-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI6954ADQ-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 71130 S-81221-Rev. C, 02-Jun-08 Vishay Siliconix Si6954ADQ Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 3.4 A 0.044 0.053 Ω VGS = 4.5 V, ID = 2.9 A 0.062 0.075 Forward Transconductancea gfs VDS = 15 V, ID = 3.4 A 10 S Diode Forward Voltagea VSD IS = 0.83 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 3.4 A 816 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.2 Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 12 20 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 23 45 Fall Time tf 815 Source-Drain Reverse Recovery Time trr IF = 0.83 A, dI/dt = 100 A/µs 25 40 Output Characteristics 0 4 8 12 16 20 01234 VGS = 10 thru 5 V 4 V VDS - Drain-to-Source Voltage (V) 3 V Transfer Characteristics 0 4 8 12 16 20 0 1234 5 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
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