Moteur de recherche de fiches techniques de composants électroniques |
|
SI5906DU Fiches technique(PDF) 1 Page - Vishay Siliconix |
|
SI5906DU Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si5906DU New Product Document Number: 65168 S09-1394-Rev. A, 20-Jul-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.031 at VGS = 10 V 6 8 nC 0.040 at VGS = 4.5 V 6 Ordering Information: Si5906DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View PowerPAK ChipFET Dual 1.8 mm 3.0 mm Marking Code CD XXX Lot Traceability and Date Code Part # Code N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6a A TC = 70 °C 6a TA = 25 °C 6a, b, c TA = 70 °C 5.3b, c Pulsed Drain Current IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 6a TA = 25 °C 1.9b, c Maximum Power Dissipation TC = 25 °C PD 10.4 W TC = 70 °C 6.7 TA = 25 °C 2.3b, c TA = 70 °C 1.5b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 43 55 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 9.5 12 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS •Network • System Power DC/DC |
Numéro de pièce similaire - SI5906DU |
|
Description similaire - SI5906DU |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |