SI5513CDC-T1-GE3 datasheet(1/16 Pages) VISHAY

No de pièce	SI5513CDC-T1-GE3

Description	N- and P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si5513CDC

Document Number: 68806

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

1

N- and P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Devices

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

a

Qg (Typ.)

N-Channel

20

0.055 at VGS = 4.5 V

4g

2.6 nC

0.085 at VGS = 2.5 V

4g

P-Channel

- 20

0.150 at VGS = - 4.5 V

- 3.7

3.6 nC

0.255 at VGS = - 2.5 V

- 2.9

Marking Code

EG

XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

S1

G1

S2

G2

D1

D2

1

1206-8 ChipFET®

Ordering Information: Si5513CDC

-T1-E3 (Lead (Pb)-free)

Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D1

G1

S1

S2

G2

D2

P-Channel MOSFET

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequade bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 115 °C/W for N-Channel and 130 °C/W for P-Channel.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4g

- 3.7

A

TC = 70 °C

4g

- 3.0

TA = 25 °C

4b, c, g

- 2.4b, c

TA = 70 °C

3.5b, c

- 1.9b, c

Pulsed Drain Current

IDM

10

- 8

Source Drain Current Diode Current

TC = 25 °C

IS

2.6

- 2.6

TA = 25 °C

1.4b, c

- 1.7b, c

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

TC = 70 °C

2.0

TA = 25 °C

1.7b, c

1.3b, c

TA = 70 °C

1.1b, c

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

62

74

77

95

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

32

40

33

40

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