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SI5504BDC-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI5504BDC-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 74483 S10-0547-Rev. B, 08-Mar-10 Vishay Siliconix Si5504BDC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 30 V VGS = 0 V, ID = - 250 µA P-Ch - 30 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 27 mV/°C ID = - 250 µA P-Ch - 30 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 5 ID = - 250 µA P-Ch 3.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.5 3 V VDS = VGS, ID = - 250 µA P-Ch - 1.5 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch 100 nA P-Ch - 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V N-Ch 1 µA VDS = - 30 V, VGS = 0 V P-Ch - 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 85 °C P-Ch - 5 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V N-Ch 10 A VDS ≤ - 5 V, VGS = - 10 V P-Ch - 10 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 3.1 A N-Ch 0.053 0.065 Ω VGS = - 10 V, ID = - 2.1 A P-Ch 0.112 0.140 VGS = 4.5 V, ID = 1 A N-Ch 0.081 0.100 VGS = - 4.5 V, ID = - 0.43 A P-Ch 0.188 0.235 Forward Transconductanceb gfs VDS = 15 V, ID = 3.1 A N-Ch 5 S VDS = - 15 V, ID = - 2.1 A P-Ch 3.5 Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz N-Ch 220 pF P-Ch 170 Output Capacitance Coss N-Ch 50 P-Ch 50 Reverse Transfer Capacitance Crss N-Ch 25 P-Ch 31 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 3.6 A N-Ch 4.5 7 nC VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A P-Ch 4.5 7 N-Channel VDS = 15 V, VGS = 4.5 V, ID = 3.6 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch 2 3 P-Ch 2.2 3.5 Gate-Source Charge Qgs N-Ch 0.7 P-Ch 0.7 Gate-Drain Charge Qgd N-Ch 0.7 P-Ch 1 Gate Resistance Rg f = 1 MHz N-Ch 3 Ω P-Ch 13 |
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