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SI4778DY-T1-GE3 Fiches technique(PDF) 5 Page - Vishay Siliconix

No de pièce SI4778DY-T1-GE3
Description  N-Channel 25-V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4778DY-T1-GE3 Fiches technique(HTML) 5 Page - Vishay Siliconix

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Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4778DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
15
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Package Limited
Power Derating
0
1
2
3
4
5
25
50
75
100
125
150
TC - Case Temperature (°C)


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