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SI4463CDY Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI4463CDY Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Document Number: 67600 www.vishay.com S11-0402-Rev. A, 14-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si4463CDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) Note Dots and squares represent measured data. VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) 0 12 24 36 48 60 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 10 V, 6 V, 5 V, 4 V, 3 V VGS = 2 V 0 2 4 6 8 10 0.0 0.6 1.2 1.8 2.4 3.0 TJ = 125 °C TJ = - 55 °C TJ = 25 °C 0.000 0.004 0.008 0.012 0.016 0.020 010 20 30 40 50 VGS = 4.5 V VGS = 10 V 0 1400 2800 4200 5600 7000 048 12 16 20 Ciss Coss Crss 0 2 4 6 8 10 0 23 46 69 92 115 ID = 10 A VDS = 10 V VDS = 15 V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 TJ = 150 °C TJ = 25 °C |
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