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BAT68W Datasheet(Fiches technique) 4 Page - Siemens Semiconductor Group

Numéro de pièce BAT68W
Description  Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)
Télécharger  4 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
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Semiconductor Group
4
Dec-20-1996
BAT 68W
Diode capacitance
CT = f (VR)
f = 1MHz
Differential forward resistance
rf = f(IF)
f = 10kHz
Forward Current
IF = f(VF)
Reverse current
IR = f (TA)
VR = 28V




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Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
BAT68-03WSilicon Schottky Diode For mixer applications in the VHF/UHF range For high speed switching 1 2 3 4 5 Siemens Semiconductor Group
BAT68-07WSilicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 1 2 3 4 5 Siemens Semiconductor Group
BAT17WSilicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 1 2 3 Siemens Semiconductor Group
BAT17-Silicon Schottky Diode For mixer applications in the VHF/UHF range For high-speed switching 1 2 3 4 Siemens Semiconductor Group
BAT17-07Silicon Schottky Diode For mixer applications in the VHF/UHF range For high-speed switching 1 2 3 4 Siemens Semiconductor Group
MA2SD30Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching 1 2 3 Panasonic Semiconductor
HSB276AYPSILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING 1 2 3 4 5 Hitachi Semiconductor
BAT14-4Silicon Schottky Diodes Medium barrier diodes for detector and mixer applications Hermetical ceramic package 1 2 3 Siemens Semiconductor Group
BAT14HiRel Silicon Schottky Diode HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications 1 2 3 4 5 MoreSiemens Semiconductor Group
1SS108Silicon Schottky Barrier Diode for Various Detector High Speed Switching 1 2 3 4 5 Hitachi Semiconductor

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