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BAT68W Datasheet(Fiches technique) 2 Page - Siemens Semiconductor Group

Numéro de pièce BAT68W
Description  Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
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Semiconductor Group
2
Dec-20-1996
BAT 68W
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
8
-
-
V
Reverse current
VR = 1 V, TA = 25 °C
VR = 1 V, TA = 60 °C
IR
-
-
-
-
1.2
0.1
µA
Forward voltage
IF = 1 mA
IF = 10 mA
VF
340
-
390
318
500
340
mV
Diode capacitance
VR = 1 V, f = 1 MHz
CT
-
-
1
pF
Differential forward resistance
IF = 5 mA
RF
-
-
10
Forward current
IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
0
20
40
60
80
100
120 °C 150
T
A,TS
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
Forward current
IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68-04W, -05W, -06W
0
20
40
60
80
100
120 °C 150
T
A,TS
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A




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Numéro de composants électroniques

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