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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI4114DY-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4114DY-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page  www.vishay.com 2 Document Number: 68394 S09-0764-Rev. B, 04-May-09 Vishay Siliconix Si4114DY New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 19 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.0 2.1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0049 0.006 Ω VGS = 4.5 V, ID = 7 A 0.0056 0.007 Forward Transconductancea gfs VDS = 10 V, ID = 10 A 55 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 3700 pF Output Capacitance Coss 745 Reverse Transfer Capacitance Crss 315 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 10 A 62 95 nC VDS = 10 V, VGS = 4.5 V, ID = 10 A 27.5 42 Gate-Source Charge Qgs 8.0 Gate-Drain Charge Qgd 6.0 Gate Resistance Rg f = 1 MHz 0.15 0.7 1.4 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 30 55 ns Rise Time tr 13 25 Turn-Off Delay Time td(off) 60 100 Fall Time tf 30 55 Turn-On Delay Time td(on) VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 13 25 Rise Time tr 918 Turn-Off Delay Time td(off) 38 65 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.1 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2 A 0.71 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 26 50 ns Body Diode Reverse Recovery Charge Qrr 16 30 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 13 |
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Description similaire - SI4114DY-T1-GE3 |
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