SI3588DV-T1-GE3 datasheet(10/12 Pages) VISHAY

No de pièce	SI3588DV-T1-GE3

Description	N- and P-Channel 20-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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AN823

Vishay Siliconix

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Document Number: 71743

27-Feb-04

255 − 260_C

1X4_C/s (max)

3-6_C/s (max)

10 s (max)

Reflow Zone

Pre-Heating Zone

3_C/s (max)

140 − 170_C

Maximum peak temperature at 240_C is allowed.

FIGURE 3.

Solder Reflow Temperature and Time Durations

60-120 s (min)

217_C

60 s (max)

THERMAL PERFORMANCE

A basic measure of a device’s thermal performance is the

junction-to-case

thermal

resistance,

Rqjc,

or

the

junction-to-foot thermal resistance, Rqjf. This parameter is

measured for the device mounted to an infinite heat sink and

is therefore a characterization of the device only, in other

words, independent of the properties of the object to which the

device is mounted. Table 1 shows the thermal performance

of the TSOP-6.

TABLE 1.

Equivalent Steady State Performance—TSOP-6

Thermal Resistance Rqjf

30_C/W

SYSTEM AND ELECTRICAL IMPACT OF

TSOP-6

In any design, one must take into account the change in

MOSFET rDS(on) with temperature (Figure 4).

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 6.1 A

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

FIGURE 4.

Si3434DV

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VBsemi Electronics Co.,...	SI3588DV-T1-GE3	598Kb / 10P	N- and P-Channel 20V (D-S) MOSFET

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3588DV	59Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET Rev. A, 23-Oct-00
	SI3586DV	362Kb / 4P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 16-May-05
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Vaishali Semiconductor	SI3585DV	67Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI4511DY	77Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 09-Aug-04
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	SI4511DY	142Kb / 9P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	AO7600	1Mb / 9P	N- and P- Channel 20 V (D-S) MOSFET

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