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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI3477DV Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI3477DV Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 11 page  www.vishay.com 2 Document Number: 70865 S10-1536-Rev. A, 19-Jul-10 Vishay Siliconix Si3477DV New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 4.1 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.4 - 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 10 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 85 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS - 4.5 V, ID = - 9 A 0.014 0.0175 VGS - 2.5 V, ID = - 7.9 A 0.019 0.023 VGS - 1.8 V, ID = - 2.2 A 0.026 0.033 Forward Transconductancea gfs VDS = - 6 V, ID = - 9 A 30 S Dynamicb Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 2600 pF Output Capacitance Coss 620 Reverse Transfer Capacitance Crss 625 Total Gate Charge Qg VDS = - 6 V, VGS = - 10 V, ID = - 9 A 58 90 nC VDS = - 6 V, VGS = - 4.5 V, ID = - 9 A 28.3 45 Gate-Source Charge Qgs 4.2 Gate-Drain Charge Qgd 7.8 Gate Resistance Rg f = 1 MHz 0.9 4.5 9.0 Turn-On Delay Time td(on) VDD = - 6 V, RL = 0.83 ID - 7.2 A, VGEN = - 4.5 V, Rg = 1 25 40 ns Rise Time tr 30 45 Turn-Off Delay Time td(off) 65 100 Fall Time tf 35 55 Turn-On Delay Time td(on) VDD = - 6 V, RL = 0.83 ID - 7.2 A, VGEN = - 10 V, Rg = 1 10 15 Rise Time tr 10 15 Turn-Off Delay Time td(off) 65 100 Fall Time tf 30 45 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 3.5 A Pulse Diode Forward Currenta ISM - 40 Body Diode Voltage VSD IS = - 7.2 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 7.2 A, dI/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Reverse Recovery Charge Qrr 30 45 nC Reverse Recovery Fall Time ta 21 ns Reverse Recovery Rise Time tb 29 |
Numéro de pièce similaire - SI3477DV |
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Description similaire - SI3477DV |
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