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SI2342DS Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI2342DS Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si2342DS Document Number: 63302 S11-1388-Rev. A, 11-Jul-11 www.vishay.com 1 New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 8 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches for Low Voltage Gate Drive • Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a, e Qg (Typ.) 8 0.017 at VGS = 4.5 V 6 6 nC 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 Marking Code F2 XXX Lot Traceability and Date Code Part # Code Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free) G S D Top View 2 3 SOT-23 1 N-Channel MOSFET G D S (3) (2) (1) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS ± 5 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6e A TC = 70 °C 6e TA = 25 °C 6e, b, c TA = 70 °C 5.8b, c Pulsed Drain Current (t = 300 µs) IDM 30 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.1b, c Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 |
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