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SI2342DS Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI2342DS
Description  N-Channel 8 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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SI2342DS Fiches technique(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si2342DS
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
www.vishay.com
1
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 8 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
Low On-Resistance
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switches for Low Voltage Gate Drive
Low Voltage Operating Circuits
- Gate Drive 1.2 V to 5 V
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a, e
Qg (Typ.)
8
0.017 at VGS = 4.5 V
6
6 nC
0.020 at VGS = 2.5 V
6
0.022 at VGS = 1.8 V
6
0.030 at VGS = 1.5 V
6
0.075 at VGS = 1.2 V
6
Marking Code
F2
XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
D
Top View
2
3
SOT-23
1
N-Channel MOSFET
G
D
S
(3)
(2)
(1)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
8
V
Gate-Source Voltage
VGS
± 5
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
6e
A
TC = 70 °C
6e
TA = 25 °C
6e, b, c
TA = 70 °C
5.8b, c
Pulsed Drain Current (t = 300 µs)
IDM
30
Continuous Source-Drain Diode Current
TC = 25 °C
IS
2.1
TA = 25 °C
1.1b, c
Maximum Power Dissipation
TC = 25 °C
PD
2.5
W
TC = 70 °C
1.6
TA = 25 °C
1.3b, c
TA = 70 °C
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 5 s
RthJA
75
100
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50


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