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SI2336DS Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI2336DS
Description  N-Channel 30 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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SI2336DS Fiches technique(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si2336DS
New Product
Document Number: 71978
S10-2247-Rev. A, 04-Oct-10
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
DC/DC Converters
Boost Converters
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
Qg (Typ.)
30
0.042 at VGS = 4.5 V
5.2
5.7 nC
0.046 at VGS = 2.5 V
4.9
0.052 at VGS = 1.8 V
4.1
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2336DS (N4)*
* Marking Code
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
5.2
A
TC = 70 °C
4.1
TA = 25 °C
4.3b, c
TA = 70 °C
3.5b, c
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
1.5
TA = 25 °C
1.0b, c
Maximum Power Dissipation
TC = 25 °C
PD
1.8
W
TC = 70 °C
1.1
TA = 25 °C
1.25b, c
TA = 70 °C
0.8b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 5 s
RthJA
80
100
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
55
70


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