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TIP147 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP147 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 4 page Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION ・With TO-3PN package ・DARLINGTON ・High DC current gain ・Complement to type TIP140/141/142 APPLICATIONS ・Designed for general–purpose amplifier and low frequency switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT TIP145 -60 TIP146 -80 VCBO Collector-base voltage TIP147 Open emitter -100 V TIP145 -60 TIP146 -80 VCEO Collector-emitter voltage TIP147 Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -10 A ICM Collector current-peak -15 A IB Base current-DC -0.5 A PC Collector power dissipation TC=25℃ 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.0 ℃/W Rth j-A Thermal resistance case to ambient 35.7 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
Numéro de pièce similaire - TIP147 |
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Description similaire - TIP147 |
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