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IRLR014TRPBF Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce IRLR014TRPBF
Description  Power MOSFET
Download  10 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRLR014TRPBF Fiches technique(HTML) 1 Page - Vishay Siliconix

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Document Number: 91321
www.vishay.com
S10-1139-Rev. C, 17-May-10
1
Power MOSFET
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)VGS = 5.0 V
0.20
Qg (Max.) (nC)
8.4
Qgs (nC)
3.5
Qgd (nC)
6.0
Configuration
Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D S
S
D
G
D
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and Halogen-free
SiHLR014-GE3
-
SiHLR014TRL-GE3
SiHLU014-GE3
Lead (Pb)-free
IRLR014PbF
IRLR014TRPbFa
IRLR014TRLPbFa
IRLU014PbF
SiHLR014-E3
SiHLR014T-E3a
SiHLR014TL-E3a
SiHLU014-E3
SnPb
IRLR014
IRLR014TRa
IRLR014TRLa
IRLU014
SiHLR014
SiHLR014Ta
SiHLR014TLa
SiHLU014
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5.0 V
TC = 25 °C
ID
7.7
A
TC = 100 °C
4.9
Pulsed Drain Currenta
IDM
31
Linear Derating Factor
0.20
W/°C
Linear Derating Factor (PCB Mount)e
0.020
Single Pulse Avalanche Energyb
EAS
27.4
mJ
Maximum Power Dissipation
TC = 25 °C
PD
25
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
2.5
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
260d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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