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IRLZ14 Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce IRLZ14
Description  Power MOSFET
Download  9 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRLZ14 Fiches technique(HTML) 1 Page - Vishay Siliconix

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Document Number: 91325
www.vishay.com
S11-0519-Rev. C, 21-Mar-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRLZ14, SiHLZ14
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, Rg = 25
Ω, IAS = 10 A (see fig. 12).
c. ISD
≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (
Ω)VGS = 5.0 V
0.20
Qg (Max.) (nC)
8.4
Qgs (nC)
3.5
Qgd (nC)
6.0
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRLZ14PbF
SiHLZ14-E3
SnPb
IRLZ14
SiHLZ14
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5.0 V
TC = 25 °C
ID
10
A
TC = 100 °C
7.2
Pulsed Drain Currenta
IDM
40
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energyb
EAS
39.5
mJ
Maximum Power Dissipation
TC = 25 °C
PD
43
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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