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TIG110GMH Fiches technique(PDF) 2 Page - Sanyo Semicon Device |
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TIG110GMH Fiches technique(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page TIG110GMH No.9018-2/5 Electrical Characteristics at Tj=25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit min typ max Collector-to-Emitter Breakdown Voltage V(BR)CES IC=1mA, VGE=0V 600 V Collector-to-Emitter Cutoff Current ICES VCE=600V, VGE=0V Tj=25°C 100 μA Tj=125°C1 mA Gate-to-Emitter Leakage Current IGES VGE=±30V, VCE=0V ±100 nA Gate-to-Emitter Threshold Voltage VGE(off) VCE=10V, IC=1mA 4.0 5.0 6.0 V Collector-to-Emitter Saturation Voltage VCE(sat)1 VGE=15V, IC=15A Tj=25°C 1.6 2.0 V Tj=125°C 1.75 V VCE(sat)2 VGE=15V, IC=40A Tj=25°C 2.2 V Input Capacitance Cies VCE=30V, f=1MHz 2880 pF Output Capacitance Coes 45 pF Reverse Transfer Capacitance Cres 38 pF Turn-ON Delay Time td(on) L=200μH, VGE=15V, IC=15A, VCC=300V, Rg=30Ω, See specified Test Circuit. 65 ns Rise Time tr 30 ns Turn-ON Time ton 300 ns Turn-OFF Delay Time td(off) 250 ns Fall Time tf 120 ns Turn-OFF Time toff 450 ns Total Gate Charge Qg VCE=300V, VGE=15V, IC=15A 95 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd 30 nC Thermal Characteristics at Ta=25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit min typ max Thermal Resistance (Junction- Case) Rth(j-c) Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.08 °C / W Thermal Resistance (Junction- at mosphere) Rth(j-a) 41.7 °C / W Switching Time Test Circuit Timing Chart 90% 0 90% 0 10% 10% VGE VCE IC 10% 10% 90% 10% toff td(off) tf tr td(on) ton IT16383 Diode RG VCC TIG110GMH 15V 0V VGE VCLAMP=600V L |
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