Moteur de recherche de fiches techniques de composants électroniques |
|
BU999 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
BU999 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU999 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for switching and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB B Base Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 106 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W isc Website:www.iscsemi.cn |
Numéro de pièce similaire - BU999 |
|
Description similaire - BU999 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |