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BU607 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU607 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU607 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB B Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
Numéro de pièce similaire - BU607 |
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Description similaire - BU607 |
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