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BU522A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BU522A
Description  isc Silicon Darlington NPN Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU522A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon Darlington NPN Power Transistor
BU522A
DESCRIPTION
·High Voltage
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V @ IC= 4A
APPLICATIONS
·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER(SUS)
Collector-Emitter Voltage
400
V
VCER
Collector-Emitter Voltage
425
V
VCBO
Collector-Base Voltage
450
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
7
A
IB
B
Base Current
2
A
PC
Collector Power Dissipation
@TC=25℃
75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.67
℃/W
isc Website：www.iscsemi.cn


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