BDX53C datasheet(2/3 Pages) ISC

No de pièce	BDX53C

Description	Silicon NPN Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BDX53/A/B/C

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDX53

45

BDX53A

60

BDX53B

80

VCEO(SUS)

Collector-emitter

sustaining voltage

BDX53C

IC=0.1A, IB=0

100

V

VCEsat

Collector-emitter saturation voltage

IC=3A ,IB=12mA

2.0

V

VBE sat

Base-emitter saturation voltage

IC=3A ,IB=12mA

2.5

V

BDX53

VCB=45V, IE=0

BDX53A

VCB=60V, IE=0

BDX53B

VCB=80V, IE=0

ICBO

Collector cut-off current

BDX53C

VCB=100V, IE=0

0.2

mA

BDX53

VCE=22V, IB=0

BDX53A

VCE=30V, IB=0

BDX53B

VCE=40V, IB=0

ICEO

Collector cut-off current

BDX53C

VCE=50V, IB=0

0.5

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

2.0

mA

hFE

DC current gain

IC=3A ; VCE=3V

750

VF-1

Forward diode voltage

IF=3A

1.8

2.5

V

VF-2

Forward diode voltage

IF=8A

2.5

V

Numéro de pièce similaire - BDX53C

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	BDX53C	187Kb / 4P	POWER TRANSISTORS(8A.,45-100V,60W)
Savantic, Inc.	BDX53C	92Kb / 3P	Silicon NPN Power Transistors
Motorola, Inc	BDX53C	169Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors
ON Semiconductor	BDX53C	106Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 13
ON Semiconductor	BDX53C	169Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS 1995 REV 7

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Motorola, Inc	MJ8504	416Kb / 6P	NPN SILICON POWER TRANSISTORS
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Siemens Semiconductor G...	BU208	100Kb / 4P	NPN SILICON POWER TRANSISTORS
	BUX80	117Kb / 5P	NPN SILICON POWER TRANSISTORS
	BUX84	106Kb / 5P	NPN SILICON POWER TRANSISTORS
Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
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