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2SD2385 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD2385 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2385 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous 0.1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Numéro de pièce similaire - 2SD2385 |
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Description similaire - 2SD2385 |
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