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LB1929 Fiches technique(PDF) 2 Page - Sanyo Semicon Device

No de pièce LB1929
Description  For Office Automation Equipment 3-phase Brushless Motor Driver
Download  11 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LB1929 Fiches technique(HTML) 2 Page - Sanyo Semicon Device

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LB1929
No.6197-2/11
Allowable Operating Ranges
at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Power supply voltage range 1
VCC
9.5 to 28
V
Regulator voltage output current
IREG
0 to -30
mA
LD output current
ILD
0 to 15
mA
Electrical Characteristics
at Ta
= 25°C, VCC = VM = 24V
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Power supply current 1
ICC1
23
30
mA
Power supply current 2
ICC2
In STOP mode
3.5
5.0
mA
Output
Output saturation voltage 1
VOsat1
IO = 1.0A, VO (SINK) +VO (SOURCE)
2.0
2.5
V
Output saturation voltage 2
VOsat2
IO = 2.0A, VO (SINK) +VO (SOURCE)
2.6
3.2
V
Output leak current
IOleak
100
µA
Lower-side diode forward voltage 1
VD1
ID = -1.0A
1.2
1.5
V
Lower-side diode forward voltage 2
VD2
ID = -2.0A
1.5
2.0
V
5V regulator voltage output
Output voltage
VREG
IO = -5mA
4.65
5.00
5.35
V
Voltage fluctuation
∆VREG1
VCC = 9.5 to 28V
30
100
mV
Load fluctuation
∆VREG2
IO = -5 to -20mA
20
100
mV
Hall amplifier
Input bias current
IHB
-2
-0.5
µA
Common mode input voltage range
VICM
1.5
VREG-1.5
V
Hall input sensitivity
80
mVp-p
Hysteresis width
∆VIN
15
24
42
mV
Input voltage L
→H
VSLH
12
mV
Input voltage H
→L
VSHL
-12
mV
PWM oscillator
Output High level voltage
VOH (PWM)
2.5
2.8
3.1
V
Output Low level voltage
VOL (PWM)
1.2
1.5
1.8
V
Oscillator frequency
F (PWM)
C = 3900pF
18
kHz
Amplitude
V (PWM)
1.05
1.30
1.55
Vp-p
CSD circuit
Operating voltage
VOH (CSD)
3.6
3.9
4.2
V
External capacitance charge
current
ICHG
-17
-12
-9
µA
Operating time
T (CSD)
C = 10
µF Design target value
3.3
s
Current limiter operation
Limiter
VRF
VCC-VM
0.45
0.5
0.55
V
Thermal shutdown operation
Thermal shutdown operating
temperature
TSD
Design target value (junction temperature)
150
180
°C
Hysteresis width
∆TSD
Design target value (junction temperature)
50
°C
FG amplifier
Input offset voltage
VIO (FG)
-10
+10
mV
Input bias current
IB (FG)
-1
+1
µA
Output High level voltage
VOH (FG)
IFGO = -0.2mA
VREG-1.2
VREG-0.8
V
Output Low level voltage
VOL (FG)
IFGO = 0.2mA
0.8
1.2
V
FG input sensitivity
GAIN 100 times
3
mV
Next-stage Schmitt comparator
width
Design target value*
100
180
250
mV
Operation frequency range
2
kHz
Open-loop gain
f (FG) = 2kHz
45
51
dB
Note*: These items are design target values and are not tested.
Continued on next page.


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