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TS1100-200 Fiches technique(PDF) 3 Page - Touchstone Semiconductor Inc |
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TS1100-200 Fiches technique(HTML) 3 Page - Touchstone Semiconductor Inc |
3 / 11 page TS1100 TS1100DS r1p0 Page 3 RTFDS ELECTRICAL CHARACTERISTICS VRS+ = VRS- = 3.6V; VSENSE = (VRS+ - VRS-) = 0V; COUT = 47nF; TA = -40°C to +105°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Current (Note 2) ICC TA = +25°C 0.68 0.85 μA 1.0 VRS+ = 25V TA = +25°C 1.0 1.2 Common-Mode Input Range VCM Guaranteed by CMRR 2 25 V Common-Mode Rejection Ratio CMRR 2V < VRS+ < 25V 120 150 dB Input Offset Voltage (Note 3) VOS TA = +25°C ±30 ±100 μV ±200 Gain G TS1100-25 25 V/V TS1100-50 50 TS1100-100 100 TS1100-200 200 Gain Error (Note 4) GE TA = +25°C ±0.1 ±0.5 % ±0.6 Output Resistance (Note 5) ROUT TS1100-25/50/100 7.0 10 13.2 kΩ TS1100-200 14.0 20 26.4 OUT Low Voltage VOL Gain = 25 5 mV Gain = 50 10 Gain = 100 20 Gain = 200 40 OUT High Voltage (Note 6) VOH VOH = VRS- - VOUT 0.05 0.2 V Output Settling Time tS TS1100-25/50/100 1% final value, VSENSE = 50mV 2.2 ms TS1100-200 4.3 ms Note 1: All devices are 100% production tested at TA = +25°C. All temperature limits are guaranteed by product characterization. Note 2: Extrapolated to VOUT = 0. ICC is the total current into the RS+ and the RS- pins. Note 3: Input offset voltage VOS is extrapolated from VOUT with VSENSE set to 1mV. Note 4: Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic: For GAIN = 25, the applied VSENSE is 20mV and 120mV. For GAIN = 50, the applied VSENSE is 10mV and 60mV. For GAIN = 100, the applied VSENSE is 5mV and 30mV. For GAIN = 200, the applied VSENSE is 2.5mV and 15mV. Note 5: The device is stable for any capacitive load at VOUT. Note 6: VOH is the voltage from VRS- to VOUT with VSENSE = 3.6V/GAIN. |
Numéro de pièce similaire - TS1100-200 |
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Description similaire - TS1100-200 |
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