 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
CDBMT230-HF Fiches technique(PDF) 1 Page - Comchip Technology |
|
||||||||||||||||||||||||||||||
CDBMT230-HF Fiches technique(HTML) 1 Page - Comchip Technology |
|
|
1 / 4 page  O Maximum Ratings (at TA=25 C unless otherwise noted) Parameter Symbol Unit Repetitive peak reverse voltage Continuous reverse voltage RMS voltage Forward rectified current Maximum forward voltage @ IF=2.0A Max. Forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Max.Reverse current VR=VRRM TJ=25°C Typ. Thermal resistance Typ. Diode Junction capacitance (Note 1) Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Dimensions in inches and (millimeter) CDBMT220-HF Thru. CDBMT2100-HF Page 1 QW-JB026 Low Profile SMD Schottky Barrier Rectifiers REV: A Comchip Technology CO., LTD. SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. VRRM VR VRMS IO VF IFSM IR RθJA CJ TJ CDBMT 220-HF CDBMT 240-HF CDBMT 260-HF CDBMT 280-HF CDBMT 2100-HF 20 20 14 40 40 28 60 60 42 2.0 0.70 50 0.5 10 85 80 80 56 100 100 70 V V V A V A mA O C/W OC 0.50 0.85 Note : Operating temperature Storage temperature range TSTG -65 to +175 OC -55 to +125 -55 to +150 160 P F CDBMT 230-HF 30 30 21 CDBMT 250-HF 50 50 35 SMD Diodes Specialist 1. F=1MHz and applied 4V DC reverse voltage VR=VRRM TJ=100°C 0.031(0.8) Typ. (Junction to ambient) Features Mechanical data -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -Weight: 0.011 grams approx. -Mounting Position: any -Epoxy: UL94-V0 rated flame retardant. Halogen Free -Low power loss,high efficiency. -High current capability,low forward voltage drop. -High surge capability. -Guarding for overvoltage protection. -Ultra high-speed switching. -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards SOD-123. -Silicon epitaxial planar chip,metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 |
Numéro de pièce similaire - CDBMT230-HF |
|
Description similaire - CDBMT230-HF |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
