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BC856W Fiches technique(PDF) 2 Page - Diotec Semiconductor |
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BC856W Fiches technique(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page BC856W ... BC859W Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VBEsat - VBEsat – – 700 mV 850 mV – – Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA - VBE - VBE 600 mV – 650 mV – 750 mV 820 mV Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) - ICBO - ICBO – – – – 15 nA 5 µA Emitter-Base cutoff current - VEB = 5 V, (C open) - IEBO – – 100 nA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT 100 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – – 4.5 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – 10 pF 15 pF Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC856W ... BC858W BC859W F F – – – 1 dB 10 dB 4 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 620 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BC846W ... BC849W Marking of available current gain groups per type Stempelung der lieferbare Stromverstärkungs- gruppen pro Typ BC856AW = 3A BC857AW = 3E BC858AW = 3J BC856BW = 3B BC857BW = 3F BC858BW = 3K BC859BW = 4B BC857CW = 3G BC858CW = 3L BC859CW = 4C 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
Numéro de pièce similaire - BC856W_11 |
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Description similaire - BC856W_11 |
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