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BC848BW Fiches technique(PDF) 2 Page - Diotec Semiconductor

No de pièce BC848BW
Description  Surface Mount General Purpose Si-Epi-Planar Transistors
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC848BW Fiches technique(HTML) 2 Page - Diotec Semiconductor

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BC846W ... BC849W
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
700 mV
900 mV
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBE
VBE
580 mV
660 mV
700 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
ICBO
ICBO
15 nA
5 µA
Emitter-Base cutoff current
VEB = 5 V, (C open)
IEBO
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
3.5 pF
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
9 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC846W ... BC848W
BC849W
F
F
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 620 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856W ... BC859W
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
BC846AW = 1A
BC847AW = 1E
BC848AW = 1J
BC846BW = 1B
BC847BW = 1F
BC848BW = 1K
BC849BW = 2B
BC847CW = 1G
BC848CW = 1L
BC849CW = 2C
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


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