2N4401 datasheet(1/2 Pages) DIOTEC

No de pièce	2N4401

Description	General Purpose Si-Epitaxial Planar Transistors

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Fabricant	DIOTEC [Diotec Semiconductor]

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2N4401

NPN

General Purpose Si-Epitaxial Planar Transistors

Si-Epitaxial Planar-Transistoren für universellen Einsatz

NPN

Version 2006-09-12

Dimensions - Maße [mm]

Power dissipation

Verlustleistung

625 mW

Plastic case

Kunststoffgehäuse

TO-92

(10D3)

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

2N4401

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

B open

VCEO

40 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

60 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

6 V

Power dissipation – Verlustleistung

Ptot

250 mW 1)

Collector current – Kollektorstrom (dc)

IC

600 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

IC = 0.1 mA, VCE = 1 V

IC = 1 mA,

VCE = 1 V

IC = 10 mA,

VCE = 1 V

IC = 150 mA, VCE = 1 V

IC = 500 mA, VCE = 2 V

hFE

20

40

80

100

40

–

300

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VCEsat

–

0.40 V

0.75 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VBEsat

0.75 V

–

0.95 V

1.2 V

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

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2 x 2.54

C BE

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