2SC4467_01 datasheet(1/1 Pages) SANKEN

No de pièce	2SC4467

Description	Silicon NPN Triple Diffused Planar Transistor

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Fabricant	SANKEN [Sanken electric]

Site Internet	http://www.sanken-ele.co.jp/en

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108

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)

Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

160

120

6

8

3

80(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Ratings

10max

120min

50min

∗

1.5max

20typ

200typ

Unit

µA

V

MHz

pF

Conditions

VCB=160V

VEB=6V

IC=50mA

VCE=4V, IC=3A

IC=3A, IB=0.3A

VCE=12V, IE=–0.5A

VCB=10V, f=1MHz

2SC4467

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

0

3

2

1

0

0.1 0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base Current I B(A)

I C=8A

2A

4A

0

8

6

2

4

0

1.5

1.0

0.5

Base-Emittor Voltage V BE(V)

(V CE=4V)

80

60

40

20

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

10

50

5

100

200

0.1

1

0.5

10

20

5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

DC

100ms

10ms

0.02

0.1

0.5

1

5

8

20

50

100

200

Collector Current I C(A)

(V CE=4V)

Typ

0

2

4

6

8

2

13

4

Collector-Emitter Voltage V CE(V)

100mA

150mA

75mA

50mA

20mA

I B=10mA

(V CE=4V)

0.02

0.5

5

8

1

20

50

200

100

0.1

Collector Current I C(A)

125˚C

25˚C

–30˚C

–0.02

–0.1

–1

–8

0

10

20

40

30

(V CE=12V)

Emitter Current I E(A)

Typ

0.3

1

3

0.5

1

1 0

100

1000

Time t(ms)

sTypical Switching Characteristics (Common Emitter)

VCC

(V)

40

RL

(

Ω)

10

IC

(A)

4

VBB2

(V)

–5

IB2

(A)

–0.4

ton

(

µs)

0.13typ

tstg

(

µs)

3.50typ

tf

(

µs)

0.32typ

IB1

(A)

0.4

VBB1

(V)

10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

∗hFE Rank O(50to100), P(70to140), Y(90to180)

Numéro de pièce similaire - 2SC4467_01

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	2SC4467G-O-T3N-T	174Kb / 4P	SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
	2SC4467G-P-T3N-T	174Kb / 4P	SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
	2SC4467G-P-T3P-T	174Kb / 4P	SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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	2SC4467G-X-T3P-T	169Kb / 4P	SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

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