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STF8N65M5 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STF8N65M5 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 25 page STB/D/F/I/P/U8N65M5 Electrical characteristics Doc ID 16531 Rev 3 5/25 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) tr(V) tc(off) tf(i) Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 4A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) (see Figure 23) - 50 14 20 11 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 7 28 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 7 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) - 200 1.6 16 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) - 263 1.9 15 ns µC A |
Numéro de pièce similaire - STF8N65M5 |
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Description similaire - STF8N65M5 |
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