BAS40-04 datasheet(1/2 Pages) TSC

No de pièce	BAS40-04

Description	200mW, Low VF, SMD Schottky Barrier Diode

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Fabricant	TSC [Taiwan Semiconductor Company, Ltd]

Site Internet	http://www.taiwansemi.com

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Small Signal Diode

200mW, Low VF, SMD Schottky Barrier Diode

BAS40 / -04 / -05 / -06

SOT-23

A

F

Features

Metal-on-silicon Shcottky Barrier

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

B

C

D

Unit (mm)

E

G

Unit (inch)

Mechanical Data

Case : Flat lead SOT 23 small outline plastic package

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

Dimensions

A

B

C

D

E

F

Min

2.80

1.20

0.30

1.80

2.25

0.90

Max

3.00

1.40

0.50

2.00

2.55

1.20

Min

0.110

0.047

0.012

0.071

0.089

0.035

Max

0.118

0.055

0.020

0.079

0.100

0.043

Marking Code : 43.44.45.46

G

0.550 REF

0.022 REF

BAS40

BAS40-04

BAS40-05

BAS40-06

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Electrical Characteristics

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : D11

Type Number

Symbol

Value

Units

Power Dissipation

PD

200

mW

Repetitive Peak Reverse Voltage

VRRM

40

V

Reverse Voltage

VR

40

V

Repetitive Peak Forward Current

IFRM

200

mA

Mean Forward Current

IO

200

mA

Non-Repetitive Peak Forward Surge Current (Note 1)

IFSM

0.6

A

Thermal Resistance (Junction to Ambient)

(Note 2)

RθJA

357

°C/W

Junction and Storage Temperature Range

TJ, TSTG

-65 to + 125

°C

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage

IR=

10μA

V(BR)

40

-

V

-

0.38

-

0.50

IF=

1mA

IF=

10mA

IF=

40mA

VF

-

1.00

V

Reverse Leakage Current

VR=

30V

IR

-

0.2

μA

Junction Capacitance

VR=1V,

f=1.0MHz

CJ

-

5

pF

Reverse Recovery Time IF =IR=10mA,RL=100Ω,IRR=1mA

Trr

-

5.0

ns

Forward Voltage

Numéro de pièce similaire - BAS40-04

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BAS40-04	45Kb / 4P	SCHOTTKY BARRIER DIODES March, 2004 ??Rev. 8
Taiwan Semiconductor Co...	BAS40-04	244Kb / 5P	Low VF SMD Schottky Barrier Diode
Diodes Incorporated	BAS40-04	257Kb / 3P	SURFACE MOUNT SCHOTTKY BARRIER DIODE DS11006 Rev. 19 - 2
Diotec Semiconductor	BAS40-04	192Kb / 2P	SMD Small Signal Schottky Diodes
Diotec Semiconductor	BAS40-04	143Kb / 2P	Surface Mount Schottky Barrier Single/Double Diodes

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Description similaire - BAS40-04

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More results

BAS40-04 Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

BAS40-04 Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

Numéro de pièce similaire - BAS40-04

Description similaire - BAS40-04

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