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RYM002N05 Fiches technique(PDF) 2 Page - Rohm

No de pièce RYM002N05
Description  0.9V Drive Nch MOSFET
Download  6 Pages
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Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
Logo ROHM - Rohm

RYM002N05 Fiches technique(HTML) 2 Page - Rohm

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Data Sheet
www.rohm.com
©20
10 ROHM Co., Ltd. All rights reserved.
RYM002N05
　
 Electrical characteristics (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Gate-source leakage
IGSS
--
10
AV
GS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS
50
-
-
V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
--
1
AV
DS=50V, VGS=0V
Gate threshold voltage
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
ID=200mA, VGS=4.5V
-
1.7
2.4
ID=200mA, VGS=2.5V
-
2.0
2.8
ID=200mA, VGS=1.5V
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
Forward transfer admittance
l Yfs l
0.2
-
-
S
ID=200mA, VDS=10V
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on)
-5
-
ns
ID=100mA, VDD 25V
Rise time
tr
-8
-
ns
VGS=4.5V
Turn-off delay time
td(off)
-
17
-
ns
RL=250
Fall time
tf
-
43
-
ns
RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
VSD
-
-
1.2
V
Is=200mA, VGS=0V
*Pulsed
Conditions
Conditions
Parameter
Parameter
Static drain-source on-state
resistance
RDS (on)
*
*
*
*
*
*
*
*
*
*
2/5
2010.07 - Rev.A


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