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IXZ210N50L Fiches technique(PDF) 1 Page - IXYS Corporation |
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IXZ210N50L Fiches technique(HTML) 1 Page - IXYS Corporation |
1 / 9 page IXZ210N50L & IXZ2210N50L RF Power MOSFET VDSS = 500 V ID25 = 10 A Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 10 A IDM Tc = 25°C, pulse width limited by TJM 60 A IAR Tc = 25°C 16 A EAR Tc = 25°C TBD mJ dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns IS = 0 >200 V/ns PDC 470 940 W PDHS Tc = 25°C, Derate 6.0W/°C above 25°C 235 470 W PDAMB Tc = 25°C 10 10 W RthJC 0.32 0.16 C/W RthJHS 0.57 0.29 C/W IXZ210N50L IXZ2210N50L min. typ. max. VDSS VGS = 0 V, ID = 4 ma 500 V VGS(th) VDS = VGS, ID = 250µΑ 3.5 4.95 6.5 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = 0.8VDSS TJ = 25C VGS=0 TJ =125C 50 1 µA mA RDS(on) VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 1.0 Ω gfs VDS = 50 V, ID = 0.5ID25, pulse test 3.8 S TJ -55 +175 °C TJM +175 °C Tstg -55 + 175 °C TL 1.6mm(0.063 in) from case for 10 s 300 °C Weight 4 g Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS RF Low Capacitance Z-MOS TM Process • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials Advantages • High Performance RF Package • Easy to mount—no insulators needed (1) Thermal specifications are for the pack- age, not per transistor N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) 300 & 550 Watts 175MHz Note: All data is per the IXZ210N50L single ended device unless otherwise noted. |
Numéro de pièce similaire - IXZ210N50L |
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Description similaire - IXZ210N50L |
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