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BUH100G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BUH100G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 5 1 Publication Order Number: BUH100/D BUH100G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH100G has an application specific state−of−art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. Features • Improved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching • Robustness Thanks to the Technology Developed to Manufacture this Device • ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 400 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 10 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 10 20 Adc Base Current − Continuous − Peak (Note 1) IB IBM 4 10 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 100 0.8 W W/_C Operating and Storage Temperature TJ, Tstg −60 to 150 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.25 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes1/8″ from Case for 5 Seconds TL 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWER TRANSISTORS 10 AMPERES 700 VOLTS − 100 WATTS TO−220AB CASE 221A−09 STYLE 1 1 http://onsemi.com MARKING DIAGRAM A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 2 3 Device Package Shipping ORDERING INFORMATION BUH100G TO−220AB (Pb−Free) 50 Units / Rail BUH100G AY WW |
Numéro de pièce similaire - BUH100G |
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