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BUH100G Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce BUH100G
Description  SWITCHMODE NPN Silicon Planar Power Transistor
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUH100G Fiches technique(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 5
1
Publication Order Number:
BUH100/D
BUH100G
SWITCHMODEt NPN Silicon
Planar Power Transistor
The BUH100G has an application specific state−of−art die designed
for use in 100 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
Features
Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
Robustness Thanks to the Technology Developed to Manufacture
this Device
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
400
Vdc
Collector−Base Breakdown Voltage
VCBO
700
Vdc
Collector−Emitter Breakdown Voltage
VCES
700
Vdc
Emitter−Base Voltage
VEBO
10
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
10
20
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
4
10
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
100
0.8
W
W/_C
Operating and Storage Temperature
TJ, Tstg −60 to 150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
TL
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
POWER TRANSISTORS
10 AMPERES
700 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
2
3
Device
Package
Shipping
ORDERING INFORMATION
BUH100G
TO−220AB
(Pb−Free)
50 Units / Rail
BUH100G
AY WW


Numéro de pièce similaire - BUH100G

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