TS985C4R datasheet(1/6 Pages) FUJI

No de pièce	TS985C4R

Description	Low-Loss Fast Recovery Diode

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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TS985C4R

Maximum Rating and Characteristics

Maximum ratings (at Ta=25˚C unless otherwise specified.)

Item

Symbols

Conditions

Ratings

Units

Repetitive peak reverse voltage

VRRM

-

400

V

Average output current

Io

50Hz Square wave duty =1/2

Tc = 114˚C

20 *

A

Non-repetitive forward surge current**

IFSM

Sine wave, 10ms 1shot

100

A

Operating junction temperature

Tj

-

150

˚C

Storage temperature

Tstg

-

-40 to +150

˚C

Note* Out put current of center tap full wave connection.

Note** Rating per element

Electrical characteristics (at Ta=25˚C unless otherwise specified.)

Item

Symbols

Conditions

Maximum

Units

Forward voltage***

VF

IF = 10 A

1.45

V

Reverse current***

IR

VR =VRRM

35

µA

Reverse recovery time***

trr

IF =0.1A, IR =0.2A, Irec =0.05A

0.05

µS

Thermal resistance

Rth(j-c)

Junction to case

1.25

˚C/W

Note*** Rating per element

http://www.fujisemi.com

FUJI Diode

Mechanical characteristics

Item

Conditions

Maximum

Units

Approximate mass

-

1.6

g

Low-Loss Fast Recovery Diode

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