FMH19N60E datasheet(3/5 Pages) FUJI

No de pièce	FMH19N60E

Description	N-CHANNEL SILICON POWER MOSFETFeatures

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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33

FUJI POWER MOSFET

FMH19N60E

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

typ.

max.

min.

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250µA

Tch [°C]

-50

-25

0

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

Tch [°C]

typ.

max.

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=9.5A,VGS=10V

0

20

40

60

80

100

120

140

0

2

4

6

8

10

12

14

Qg [nC]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=19A,Tch=25°C

480V

300V

Vcc= 120V

10

-1

10

0

10

1

10

2

10

3

10

0

10

1

10

2

10

3

10

4

VDS [V]

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

Crss

Coss

Ciss

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

0.1

1

10

100

VSD [V]

ID [A]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 µs pulse test,Tch=25°C

10

-1

10

0

10

1

10

0

10

1

10

2

10

3

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=8.2Ω

td(on)

tr

tf

td(off)

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Fabricant	No de pièce	Fiches technique	Description
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