FMH06N90E datasheet(2/5 Pages) FUJI

No de pièce	FMH06N90E

Description	N-CHANNEL SILICON POWER MOSFET

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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FMH06N90E

3

FUJI POWER MOSFET

http://www.fujisemi.com

0

25

50

75

100

125

150

0

25

50

75

100

125

150

Allowable Power Dissipation

PD=f(Tc)

Tc [°C]

10

-1

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

t

P

D

Power loss waveform :

Square wavefo rm

t

P

D

t

P

D

Power loss waveform :

Square wavefo rm

VDS [V]

Safe Operating Area

I

D=f(VDS):Duty=0(Single pulse), Tc=25 °c

t=

1µs

10µs

1ms

100µs

0

4

8

12

16

20

24

0

1

2

3

4

5

6

7

8

20V

10V

6.0V

7.0V

VDS [V]

Typical Output Characteristics

ID=f(VDS):80µs pulse test, Tch=25°C

VGS=5.5V

0

1

2

3

4

5

6

7

8

9

10

0.1

1

10

100

VGS[V]

TypicalTransferCharacteristic

ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C

0.1

1

10

100

0.1

1

10

100

Typical Transconductance

gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C

0

1

2

3

4

5

6

7

8

1.6

2.0

2.4

2.8

3.2

3.6

4.0

20V

6V

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80µs pulse test, Tch=25°C

10V

7V

VGS=5.5V

ID [A]

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