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FMC06N60ES Fiches technique(PDF) 1 Page - Fuji Electric |
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FMC06N60ES Fiches technique(HTML) 1 Page - Fuji Electric |
1 / 5 page 1 FMC06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 600 V VDSX 600 V VGS = -30V Continuous Drain Current ID ±6 A Pulsed Drain Current IDP ±24 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 313.7 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 10.5 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 3.8 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD 1.67 W Ta=25°C 105 Tc=25°C Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 600 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 3.2 3.7 4.2 V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Tch=25°C - - 25 µA VDS=480V, VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=3A, VGS=10V - 1.03 1.20 Ω Forward Transconductance gfs ID=3.0A, VDS=25V 2.5 5 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 950 1425 pF Output Capacitance Coss - 100 150 Reverse Transfer Capacitance Crss - 7.5 11 Turn-On Time td(on) Vcc=300V VGS=10V ID=3.0A RG=27Ω - 29 43.5 ns tr - 15 22.5 Turn-Off Time td(off) - 75 113 tf - 16 24 Total Gate Charge QG Vcc=300V ID=6A VGS=10V - 31 46.5 nC Gate-Source Charge QGS - 10.5 15.8 Gate-Drain Charge QGD - 8 12 Gate-Drain Crossover Charge QSW - 4.5 6.75 Avalanche Capability IAV L=6.39mH, Tch=25°C 6 - - A Diode Forward On-Voltage VSD IF=6A, VGS=0V, Tch=25°C - 0.90 1.35 V Reverse Recovery Time trr IF=6A, VGS=0V -di/dt=100A/µs, Tch=25°C - 0.4 - µS Reverse Recovery Charge Qrr - 3.3 - µC Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=2.4A, L=99.8mH, Vcc=60V, RG=50Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case 1.19 °C/W Rth (ch-a) Channel to ambient 75.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=3.8kV/µs, Vcc≤BVDSS, Tch≤150°C. T-Pack(S) |
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