KF4N20LW datasheet(1/6 Pages) KEC

No de pièce	KF4N20LW

Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Fabricant	KEC [KEC(Korea Electronics)]

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2010. 8. 18

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SEMICONDUCTOR

TECHNICAL DATA

KF4N20LW

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

switching mode power supplies.

FEATURES

・VDSS(Min.)= 200V, ID= 1A

・Drain-Source ON Resistance : RDS(ON)=1.05 Ω(max) @VGS =10V

・Qg(typ.) =2.9nC

・Vth(Max.)= 2V

MAXIMUM RATING (Tc=25

℃)

* : Surface Mounted on FR4 Board (40mm

×40mm, 1.0t)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

200

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

@TC=25℃

ID

1*

A

@TC=100℃

0.6*

Pulsed (Note1)

IDP

4*

Single Pulsed Avalanche Energy

(Note 2)

EAS

52

mJ

Repetitive Avalanche Energy

(Note 1)

EAR

0.2

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

5.5

V/ns

Drain Power

Dissipation

TA=25℃

PD

2.2*

W

Derate above25

℃

0.018

W/

℃

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-

Ambient

RthJA

57*

℃/W

PIN CONNECTION

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