2SK2691-01R datasheet(1/4 Pages) FUJI

No de pièce	2SK2691-01R

Description	N-CHANNEL SILICON POWER MOSFET

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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1 / 4 page

1

Item

Symbol

Rating

Unit

Remarks

Drain-source voltage

VDS

60

Continuous drain current

ID

±70

Pulsed drain current

ID[puls]

±280

Gate-source peak voltage

VGS

±20

Maximum avalanche energy

EAV

685

Maximum power dissipation

PD

100

Operating and storage

Tch

+150

temperature range

Tstg

2SK2691-01R

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Equivalent circuit schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

V

A

V

mJ

W

°C

-55 to +150

FAP-IIIB SERIES

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermal characteristics

Item

Symbol

Zero gate voltage drain current

IDSS

Min.

Typ.

Max.

Units

V

µA

mA

nA

m

Ω

m

Ω

S

pF

ns

A

V

ns

µC

Min.

Typ.

Max.

Units

Thermal resistance

Rth(ch-c)

Rth(ch-a)

1.25

30.0

°C/W

Symbol

V(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Test Conditions

ID=1mA

VGS=0V

ID=1mA

VDS=VGS

VDS=60V

VGS=0V

Tch=25°C

Tch=125°C

VGS=20V VDS=0V

ID=40A

VGS=10V

ID=40A

VDS=25V

VGS=0V

f=1MHz

VCC=30V RG=10

Ω

ID=75A

VGS=10V

L=100

µH

Tch=25°C

IF=160A VGS=0V Tch=25°C

IF=80A

-di/dt=100A/

µs Tch=25°C

60

1.0

1.5

2.0

10

500

0.2

1.0

10

100

12

17

7.5

10

25

55

3500

5250

1250

1870

360

540

15

23

75

120

190

285

110

165

70

1.15

1.65

75

120

0.17

Gate(G)

Source(S)

Drain(D)

Features

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

www.fujielectric.co.jp/fdt/scd

*1 L=0.186mH, Vcc=24V

Item

Drain-source breakdown voltage

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

*1

Outline Drawings

TO-3PF

VGS=4V

VGS=10V

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