2SK2689-01MR_05 datasheet(1/4 Pages) FUJI

No de pièce	2SK2689-01MR

Description	N-CHANNEL SILICON POWER MOSFET

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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1

Item

Symbol

Rating

Unit

Remarks

Drain-source voltage

VDS

30

Continuous drain current

ID

±50

Pulsed drain current

ID[puls]

±200

Gate-source peak voltage

VGS

±16

Maximum avalanche energy

EAV

520

Maximum power dissipation

PD

40

Operating and storage

Tch

+150

temperature range

Tstg

2SK2689-01MR FUJIPOWERMOSFET

N-CHANNEL SILICON POWER MOSFET

Equivalent circuit schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

V

A

V

mJ

W

°C

-55 to +150

FAP-IIIB SERIES

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermal characteristics

Item

Symbol

Zero gate voltage drain current

IDSS

Min.

Typ.

Max.

Units

V

µA

mA

nA

m

Ω

m

Ω

S

pF

ns

A

V

ns

µC

Min.

Typ.

Max.

Units

Thermal resistance

Rth(ch-c)

Rth(ch-a)

3.125

62.5

°C/W

Symbol

V(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Test Conditions

ID=1mA

VGS=0V

ID=1mA

VDS=VGS

VDS=30V

VGS=0V

Tch=25°C

Tch=125°C

VGS=±16V VDS=0V

ID=25A

VGS=10V

ID=25A

VDS=25V

VGS=0V

f=1MHz

VCC=15V RG=10

Ω

ID=50A

VGS=10V

L=100

µH

Tch=25°C

IF=2xIDR VGS=0V Tch=25°C

IF=2xIDR VGS=0V

-di/dt=100A/

µs Tch=25°C

30

1.0

1.5

2.0

10

500

0.2

1.0

10

100

12

17

7.5

10

22

45

2750

4130

1300

1950

600

900

13

20

55

83

180

270

150

230

50

1.14

1.71

85

130

0.17

Gate(G)

Source(S)

Drain(D)

Features

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

www.fujielectric.co.jp/fdt/scd

*1 L=0.277mH, Vcc=12V

Item

Drain-source breakdown voltage

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

*1

Outline Drawings

TO-220F

VGS=4V

VGS=10V

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