BC550 datasheet(1/1 Pages) KEC

No de pièce	BC550

Description	EPITAXIAL PLANAR NPN TRANSISTOR

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Fabricant	KEC [KEC(Korea Electronics)]

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1999. 11. 30

1/1

SEMICONDUCTOR

TECHNICAL DATA

BC549/550

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

LOW NOISE AMPLIFIER APPLICATION.

FEATURE

For Complementary with PNP Type BC559/560.

MAXIMUM RATING (Ta=25

)

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2

3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. COLLECTOR

2. BASE

3. EMITTER

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter

Breakdown Voltage

BC549

V(BR)CEO

IC=10mA, IB=0

30

-

V

BC550

45

-

Collector-Base

Breakdown Voltage

BC549

V(BR)CBO

IC=10 A, IE=0

30

-

V

BC550

50

-

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

5.0

-

V

Collector Cut-off Current

ICBO

VCB=30V, IE=0

-

15

nA

DC Current Gain

hFE(Note)

IC=2mA, VCE=5V

110

-

800

Base-Emitter Voltage

VBE(ON)

IC=2mA, VCE=5V

0.55

-

0.7

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=5mA

-

0.6

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=5mA

-

0.9

-

V

Transition Frequency

fT

IC=10mA, VCE=5V, f=100MHz

-

300

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

4.5

pF

Noise Figure

BC549

NF

IC=200 A, VCE=5V

Rg=10k

, f=1kHz

-

4.0

dB

BC550

-

10

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

BC549

VCBO

30

V

BC550

50

Collector-Emitter Voltage

BC549

VCEO

30

V

BC550

45

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

100

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

Note : hFE Classification A:110 220, B:200 450, C:420 800

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