BYM200B170DN2 datasheet(1/5 Pages) EUPEC

No de pièce	BYM200B170DN2

Description	IGBT-Modules

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules

BYM 200 B 170 DN2

vorläufige Daten

preliminary data

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Sperrspannung der Diode

Diode rerverse voltage

Tvj = 25°C

VCES

1700

V

Dauergleichstrom

DC forward current

TC = 80 °C

IF

200

A

Periodischer Spitzenstrom

repetitive peak forward current

tp = 1 ms

IFRM

400

A

Grenzlastintegral der Diode

I

2t - value, Diode

VR = 0V, tp = 10ms, TVj = 125°C

I

2t

14,5

k A

2s

Isolations-Prüfspannung

insulation test voltage

RMS, f = 50 Hz, t = 1 min.

VISOL

4,0

kV

Charakteristische Werte / Characteristic values

Diode / Diode

min.

typ.

max.

Durchlaßspannung

IF = 200A, VGE = 0V, Tvj = 25°C

VF

-

2,2

2,6

V

forward voltage

IF = 200A, VGE = 0V, Tvj = 125°C

-

2,0

-

V

Rückstromspitze

IF = 200A, - diF/dt = 3000A/µs

peak reverse recovery current

VR = 900V, VGE = -15V, Tvj = 25°C

IRM

-

130

-

A

VR = 900V, VGE = -15V, Tvj = 125°C

-

190

-

A

Sperrverzögerungsladung

IF = 200A, - diF/dt = 3000A/µs

recovered charge

VR = 900V, VGE = -15V, Tvj = 25°C

Qr

-

22

-

µAs

VR = 900V, VGE = -15V, Tvj = 125°C

-

50

-

µAs

Abschaltenergie pro Puls

IF = 200A, - diF/dt = 3000A/µs

reverse recovery energy

VR = 900V, VGE = -15V, Tvj = 25°C

Erec

-

10

-

mWs

VR = 900V, VGE = -15V, Tvj = 125°C

-

20

-

mWs

prepared by: Alfons Wiesenthal

date of publication: 2002-11-25

approved by: Christoph Lübke

revision: 2.2

1(4)

DB_BYM200B170DN2_2.2.xls

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