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MSAFX50N20A Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce MSAFX50N20A
Description  N-Channel Enhancement Mode Power Mosfet
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MSAFX50N20A Fiches technique(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0203 Rev. 1 (110640)
Page 2 of 3
Table 2 – ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Typ
Max.
Unit
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
VGS = 0V, ID = 250μA
BVDSS
200
V
Temperature Coefficient of the Drain-to-Source - Breakdown
Voltage
ΔBV
DSS
/
ΔT
J
TBD
Gate Threshold Voltage
VDS = VGS, ID = 4 mA
VGS(th)
2.0
4.0
Gate-to-Source Leakage Current
VGS = ±20Vdc, VDS = 0
TJ = 25°C
TJ = 125°C
IGSS
±100
±200
nA
Drain-to-Source Leakage Current (Zero Gate Voltage Drain
Current)
VDS = 0.8 BVDSS, TJ = 25°C
VGS = 0V, TJ = 125°C
IDSS
200
1000
µA
Static Drain-to-Source On-State Resistance (1)
VGS= 10V, ID= 25A, TJ = 25°C
VGS= 10V, ID = 50A TJ = 25°C
VGS= 10V, ID = 25A TJ = 125°C
RDS(on)
0.09
0.045
0.055
Forward Transconductance (1)
VDS ≥ 10V, ID = 50A
gfs
26
32
S
Input Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
Ciss
4400
pF
Output Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
Coss
500
pF
Reverse Transfer Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
Crss
285
pF
Turn-on Delay Time
td(on)
20
25
nS
Rise Time
VGS = 10V, VDS = 100V,
tr
45
50
nS
Turn-off Delay Time
ID = 25A, RG = 2.00Ω
td(off)
75
90
nS
Fall Time
tf
20
25
nS
Total Gate Charge
VGS = 10V, VDS = 100V,
Qg(on)
190
220
nC
Gate-to-Source Charge
ID = 25A
Qgs
35
50
nC
Gate-to-Drain (Miller) Charge
Qgd
95
110
nC
Body Diode Forward Voltage (1)
IF = IS, VGS = 0V
VSD
1.5
V
Reverse Recovery Time (Body Diode)
IF = 10A, TJ = 25°C
-di/dt = 100 A /
μs, TJ = 125°C
trr
200
300
nS
Reverse Recovery Charge
IF = 10A, TJ = 25°C
di/dt = 100A /
μs, TJ = 125°C
Qrr
1.5
2.6
µC


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