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PZT2222A Fiches technique(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

No de pièce PZT2222A
Description  General Purpose Transistor
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Fabricant  SECOS [SeCoS Halbleitertechnologie GmbH]
Site Internet  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZT2222A Fiches technique(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
PZT2222A
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300
500
500
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10
20
70 100
5.0 7.0
30
50
200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t′s = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
1.0 2.0
5.0 10 20
50
0.2
0.5
0
100
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 μA, RS = 200 Ω
100 μA, RS = 2.0 kΩ
50 μA, RS = 4.0 kΩ
f = 1.0 kHz
IC = 50 μA
100 μA
500 μA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30
50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE = 20 V
TJ = 25°C
01-Jun-2002 Rev. A
Page 3 of 4


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