3 / 18 page
HD
HG
LG
LD
M0189-01
LS
HS
HD
HG
LG
LD
M0190-01
LS
HS
CSD87352Q5D
www.ti.com
SLPS286
– JUNE 2011
ELECTRICAL CHARACTERISTICS
TA = 25°C (unless otherwise stated)
Q1 Control FET
Q2 Sync FET
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250μA
30
30
V
Drain to Source Leakage
IDSS
VGS = 0V, VDS = 24V
1
1
μA
Current
Gate to Source Leakage
IGSS
VDS = 0V, VGS = +10 / -8
100
100
nA
Current
Gate to Source Threshold
VGS(th)
VDS = VGS, IDS = 250μA
1
2.1
0.75
1.15
V
Voltage
VIN = 12V, VGS = 5V,
Effective AC
VOUT = 1.3V, IOUT = 15A,
ZDS(on)
(1)
9
10.8
2.8
3.6
m
Ω
On-Impedance
fSW = 500kHz,
LOUT = 0.3µH, TJ = 25ºC
gfs
Transconductance
VDS = 15V, IDS = 15A
51
87
S
Dynamic Characteristics
CISS
Input Capacitance
740
890
1500
1800
pF
COSS
Output Capacitance
VGS = 0V, VDS = 15V,
315
380
645
775
pF
f = 1MHz
Reverse Transfer
CRSS
12
14
38
46
pF
Capacitance
RG
Series Gate Resistance
1.2
2.4
0.6
1.2
Ω
Qg
Gate Charge Total (4.5V)
4.6
5.5
10.4
12.5
nC
Gate Charge - Gate to
Qgd
0.9
1.9
nC
Drain
VDS = 15V,
IDS = 15A
Gate Charge - Gate to
Qgs
1.5
2.2
nC
Source
Qg(th)
Gate Charge at Vth
0.9
1.2
nC
QOSS
Output Charge
VDS = 9.8V, VGS = 0V
6.6
13
nC
td(on)
Turn On Delay Time
5.4
6.1
ns
tr
Rise Time
11
7
ns
VDS = 15V, VGS = 4.5V,
IDS = 15A, RG = 2Ω
td(off)
Turn Off Delay Time
9.5
16
ns
tf
Fall Time
2
2.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 15A, VGS = 0V
0.8
0.8
V
Qrr
Reverse Recovery Charge
11.3
16.3
nC
Vdd = 9.8V, IF = 15A,
di/dt = 300A/
μs
trr
Reverse Recovery Time
16
20
ns
(1)
Equivalent System Performance based on application testing. See page 9 for details.
Max RθJA = 82°C/W
Max RθJA = 150°C/W
when mounted on
when mounted on
1 inch2 (6.45 cm2) of
minimum pad area of
2-oz. (0.071-mm
2-oz. (0.071-mm thick)
thick) Cu.
Cu.
Copyright
© 2011, Texas Instruments Incorporated
3