BCX56 datasheet(1/2 Pages) SECOS

No de pièce	BCX56

Description	Plastic-Encapsulate Transistors

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

Site Internet	http://www.secosgmbh.com

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BCX56

NPN Transistors

Plastic-Encapsulate Transistors

RoHS Compliant Product

Elektronische Bauelemente

1.BASE

2.COLLECTOR

3.EMITTER

1

2

3

Features

C

o

Power dissipation

PCM:

1 . 2

W (Tamb=25 )

Collector current

ICM:

1

A

Collector-base voltage

V(BR)CBO:

1 0 0

V

Operating and storage junction temperature range

TJ, Tstg: -65

to +150

C

o

C

o

Complimentary to BCX53

Any changing of specification will not be informed individual

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Page 1 of 2

4.4~4.6

1.4~1.8

0.35~0.44

1.4~1.6

0.32~0.52

0.36~0.56

1.5Ref.

2.9~3.1

Dimensision in Millimeter

SOT-89

C

o

E

Classification of hFE2

Range

Rank

10

16

63 - 160

100 - 250

DEVICE MARKING

BCP56

xxxx

Date Code

LECTRICAL

CHARACTERISTICS (Tamb=25

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA, IE=0

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1 mA , IB=0

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µ A, IC=0

5

80

100

V

Collector cut-off current

ICBO

VCB=30V, IE=0

100

nA

Emitter cut-off current

IEBO

VEB=5 V, IC=0

100

nA

hFE(1)

VCE=2V, IC= 150mA

63

250

hFE(2)

VCE=2V, IC= 5mA

63

DC current gain

BCX56

BCX56-10

BCX56-16

hFE(3)

VCE=2V, IC= 500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=500 mA, IB= 50mA

500

mV

Base-emitter

voltage

VBE(ON)

IC= 500 mA, VCE=2V

1

V

Transition frequency

f T

VCE= 5V, IC= 10mA

100

MHz

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