CDLL5531B datasheet(1/2 Pages) MICROSEMI

No de pièce	CDLL5531B

Description	ZENER DIODE, 500mW

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Fabricant	MICROSEMI [Microsemi Corporation]

Site Internet	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

ZENER DIODE, 500mW

– LEADLESS PACKAGE FOR SURFACE MOUNT

– LOW REVERSE LEAKAGE CHARACTERISTICS

– METALLURGICALLY BONDED

Qualified per MIL-PRF-19500/437

LDS-0037 Rev. 1 (072304)

Page 1 of 2

DEVICES

1N5518BUR-1 Thru 1N5546BUR-1

And

CDLL5518 Thru CDLL5546D

QUALIFIED LEVELS

JAN

JANTX

JANTXV

MAXIMUM RATING AT 25°C

Junction and Storage Temperature:

DC Power Dissipation:

Power Derating:

Forward Voltage @ 200mA:

-65°C to +175°C

500mW @ TEC = +125°C

10mW / °C above TEC = +125°C

1.1 volts maximum

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

NOMINAL

ZENER

VOLTAGE

ZENER

TEST

CURRENT

MAX. ZENER

IMPEDANCE

B-C-D

SUFFIX

MAXIMUM REVERSE LEAKAGE

CURRENT

B-C-D

SUFFIX

MAIMUM

DC ZENER

REGULATION

FACTOR

CURRENT

LOW

VZ

CURRENT

VZ @ IZT

(NOTE 2)

IZT

ZZT @ IZT

(NOTE 3)

IR

(NOTE 4)

VR = VOLTS

IZM

ΔV

Z

(NOTE 5)

IZL

TYPE

NUMBER

(NOTE 1)

VOLTS

mA

Ohms

μAdc

NON &

A-

SUFFIX

B-C-D-

SUFFIX

mA

VOLTS

mA

CDLL5518B

CDLL5519B

CDLL5520B

CDLL5521B

CDLL5522B

3.3

3.6

3.9

4.3

4.7

20

10

26

24

22

18

22

5.0

3.0

1.0

3.0

2.0

0.90

1.0

1.5

1.0

1.5

2.0

115

105

98

88

81

0.90

0.85

0.75

0.60

2.0

1.0

CDLL5523B

CDLL5524B

CDLL5525B

CDLL5526B

CDLL5527B

5.1

5.6

6.2

6.8

7.5

5.0

3.0

1.0

26

30

35

2.0

1.0

0.5

2.0

3.0

4.5

5.5

6.0

2.5

3.5

5.0

6.2

6.8

75

68

61

56

51

0.65

0.30

0.20

0.10

0.05

0.25

0.01

CDLL5528B

CDLL5529B

CDLL5530B

CDLL5531B

CDLL5532B

8.2

9.1

10.0

11.0

12.0

1.0

40

45

60

80

90

0.5

0.1

0.05

6.5

7.0

8.0

9.0

9.5

7.5

8.2

9.1

9.9

10.8

46

42

38

35

32

0.05

0.10

0.20

0.01

CDLL5533B

CDLL5534B

CDLL5535B

CDLL5536B

CDLL5537B

13.0

14.0

15.0

16.0

17.0

1.0

90

100

0.01

10.5

11.5

12.5

13.0

14.0

11.7

12.6

13.5

14.4

15.3

29

27

25

24

22

0.20

0.01

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

D

1.60

1.70

0.063

0.067

F

0.41

0.55

0.016

0.022

G

3.30

3.70

.130

.146

G1

2.54 REF.

.100 REF.

S

0.03 MIN

.001 MIN

FIGURE 1

DESIGN DATA

CDLL5538B

CDLL5539B

CDLL5540B

CDLL5541B

CDLL5542B

18.0

19.0

20.0

22.0

24.0

1.0

100

0.01

15.0

16.0

17.0

18.0

20.0

16.2

17.1

18.0

19.8

21.6

21

20

19

17

16

0.20

0.25

0.30

0.01

CASE: DO-213AA, Hermetically sealed glass case.

(MELF, SOD-80, LL34)

CDLL5543B

CDLL5544B

CDLL5545B

CDLL5546B

25.0

28.0

30.0

33.0

1.0

100

0.01

21.0

23.0

24.0

28.0

22.4

25.2

27.0

29.7

15

14

13

12

0.35

0.40

0.45

0.50

0.01

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (RθJEC):

100 °C/W maximum at L = 0 inch

NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A”

suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six

parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for

±1.0%.

THERMAL IMPEDANCE: (ZθJX):

35°C/W maximum

NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient

temperature of 25°C ± 3°C.

POLARITY: Diode to be operated with the banded

(cathode) end positive.

NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT.

NOTE 4: Reverse leakage currents are measured at VR as shown on the table.

NOTE 5:

ΔV

Z is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction

in thermal equilibrium.

MOUTING SURFACE SELECTION:

The Axial Coefficient of Expansion (COE) of this

device is approximately +6PPM/°C. The COE of the

Mounting Surface System should be selected to

provide a suitable match with this device.

S

F

G1

G

D

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