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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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1N3295 Fiches technique(PDF) 1 Page - Microsemi Corporation |
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1N3295 Fiches technique(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/246 • Glass Passivated Die • Glass to Metal Header Construction • VRRM to 1000V • 1600 Amps Surge Rating T4-LDS-0142 Rev. 1 (091785) Page 1 of 3 DEVICES LEVELS 1N3289 1N3294 1N3289R 1N3294R JAN 1N3291 1N3295 1N3291R 1N3295R JANTX 1N3293 1N3293R JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Peak Repetitive Reverse Voltage 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R VRWM 200 400 600 800 1000 V Average Forward Current, TC = 134° IF 100 A Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 150°C IFSM 1600 A Thermal Resistance, Junction to Case RθJC 0.4 °C/W Operating Case Temperature Range Tj -65°C to 200°C °C Storage Temperature Range TSTG -65°C to 200°C °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Forward Voltage IFM = 310A, TC = 25°C * VFM 1.55 V Reverse Current VRM = 200, TC = 25°C VRM = 400, TC = 25°C VRM = 600, TC = 25°C VRM = 800, TC = 25°C VRM = 1000, TC= 25°C 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R IRM 10 mA Reverse Current VRM = 200, TC = 200°C VRM = 400, TC = 200°C VRM = 600, TC = 200°C VRM = 800, TC = 200°C VRM = 1000, TC = 200°C 1N3289 1N3291 1N3293 1N3294 1N3295 1N3289R 1N3291R 1N3293R 1N3294R 1N3295R IRM 30 mA * Pulse test: Pulse width 300 μsec. Duty cycle 2% Note: DO-205AA (DO-8) |
Numéro de pièce similaire - 1N3295 |
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Description similaire - 1N3295 |
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