2N3439CSM4 datasheet(2/2 Pages) SEME-LAB

No de pièce	2N3439CSM4

Description	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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2N3439CSM4

LAB

SEME

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/98

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IC = 50mA

IB = 0

VCE = 450V

IE = 0

VCB = 300V

TC = 125°C

IC = 0

VEB = 6V (off)

IC = 50mA

IB = 4mA

IC = 50mA

IB = 4mA

IC = 20mA

IC = 10mA

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

VCEO(sus)* Collector – Emitter Sustaining Voltage

ICEX*

Collector Cut-off Current (IC = 0)

ICBO*

Collector – Base Cut-off Current

IEBO*

Emitter Cut-off Current (IC = 0)

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

350

500

20

10

20

0.5

1.3

40

160

V

µA

V

—

fT

Transition Frequency

Cob

Output Capacitance

hfe

Small Signal Current Gain

IC = 10mA

VCE = 10V

f = 5MHz

VCB = 10V

IE = 0

f = 1.0MHz

IC = 5mA

VCE = 10V

f = 1kHz

15

10

25

MHz

pF

* Pulse test tp = 300µs , δ ≤ 2%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Numéro de pièce similaire - 2N3439CSM4

Fabricant	No de pièce	Fiches technique	Description
Seme LAB	2N3439CSM4	40Kb / 2P	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR
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	2N3439CSM4	40Kb / 2P	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR

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